Premodifier: silicon
Head noun: oxide

Same concepts
http://dbpedia.org/resource/Silicon_oxide

Broader concepts

labelprovenanceconfidence
inorganic substanceisap:3358462260.875732
dielectric materialisap:2976642210.838879
silicon oxideisap:3678068870.836800
low dielectric constant materialisap:2976646460.813432
inorganic oxideisap:3678068850.793981
metal oxideisap:3678068440.767568
suitable dielectric materialisap:2976642970.751248
other materialisap:2976642650.733712
second layerisap:3716234740.725080
insulation filmisap:2011488670.722354
similar dielectric materialisap:2976646120.721575
suitable materialisap:2976642400.721413
materialisap:2976642130.717116
film contain siliconisap:2011488600.717036
similar materialisap:2976643550.716538
low k materialisap:2976645110.714647
metal oxide layerisap:3716234080.700490
inorganic layerisap:3716232740.700361
insulative materialisap:2976642890.699786
silicon compoundisap:2967119620.695974
inorganic materialisap:2976642250.694238
substanceisap:3358462210.692849
stack structureisap:3380730430.692343
gate insulatorisap:3389927880.682974
second dielectric layerisap:3716234590.672605
silicon nitride filmisap:2011489070.666903
particleisap:2931260860.665152
oxideisap:3678068260.644733
dielectric layerisap:3716232510.643340
oxide materialisap:2976642580.638631
barrier propertyisap:2987961920.637468
mixed oxideisap:3678070180.631065
oxide layerisap:3716232970.624217
surface of the substrateisap:2311342410.618996
insulative layerisap:3716233510.616196
type of dielectric materialisap:1987211080.614616
inorganic compoundisap:2967119060.603245
silicon nitrideisap:2269087970.601936
non-conductive materialisap:2976645990.599497
layerisap:3716232490.598771
insulation materialisap:2976642980.595995
surfaceisap:2311342300.595846
mask layerisap:3716233710.594153
limited toisap:2398149320.593949
insulator layerisap:3716232650.591484
ceramicisap:2264058270.587283
first layerisap:3716233320.585204
isolation materialisap:2976645370.580321
insulatorisap:3389927790.579982
layer of insulate materialisap:3716232700.577682
exampleisap:2281973370.572304
componentisap:3345753650.569085
dielectric layer 12isap:3716234450.557855
compoundisap:2967119290.550614
metalisap:3746269600.542437
aluminum oxideisap:3678069120.538349
embodimentisap:2614101850.536330
silicon dioxideisap:2278087350.531723
cvd methodisap:1629110200.530698
alternativelyisap:968003550.527270
layer 6isap:3716234110.523364
multi-layer structureisap:3380730460.521085
insulation layerisap:3716232790.518276
semiconductor deviceisap:1549785610.517558
passivation layerisap:3716232710.512645
thin layerisap:3716232750.511476
fig 2bisap:2398094600.509356
sidewallisap:2960462980.505673
rigid materialisap:2976645630.502590
gate dielectric layerisap:2011938190.494752
filmisap:2011488540.479046
problemisap:2291209720.473581
siliconisap:2223371070.460724
stainless sus substrateisap:3371453060.458551
thin filmisap:2011488750.447148
alisap:2398137360.436593
layer of silicon oxideisap:3716233260.436394
film 16isap:2011489260.434981
layer 22isap:3716233690.428441
moreoverisap:2934226000.428129
furtherisap:2228522900.418107
gate insulate film 5isap:2011938200.416627
polymerisap:2230790900.412588
protective layerisap:3716233650.397045
materialsisap:3397740780.393300
elementisap:2259168500.392561
dielectricisap:2600483690.378662
semiconductorisap:966544820.362096
glassisap:3712912000.338871
howeverisap:2315155760.335946
compositionisap:2091380840.327500
alsoisap:2014638770.321796
layer 19isap:3716234570.319425
substrateisap:3371452940.281468
residueisap:2221320600.281241
purposeisap:2315596810.271192
mixtureisap:2293238060.256087
quartzisap:1574468850.250545
gate insulate film 55isap:2011938210.222392