Premodifier: bufferHead noun: layer
Same concepts |
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Broader concepts
label | provenance | confidence |
---|---|---|
el layer | isap:370508419 | 0.759167 |
first buffer layer | isap:370508650 | 0.724404 |
single layer | isap:370508029 | 0.722971 |
additional layer | isap:370507978 | 0.687000 |
further layer | isap:370509681 | 0.677516 |
buffer layer | isap:370508310 | 0.671417 |
layer | isap:370507199 | 0.655823 |
electrode | isap:340264404 | 0.563069 |
solar cell | isap:199256346 | 0.411238 |
method | isap:158044581 | 0.385885 |
thin film | isap:199833599 | 0.243661 |
Narrower concepts
label | provenance | confidence |
---|---|---|
semiconductor layer | isap:370507581 | 0.698253 |
buffer layer | isap:370508310 | 0.671417 |
aluminum nitride | isap:36263141 | 0.658235 |
diffusion barrier | isap:39409414 | 0.630090 |
active region | isap:123813769 | 0.523172 |
algan | isap:371716219 | 0.448436 |
layer | isap:370507346 | 0.443712 |
sapphire | isap:362833205 | 0.420937 |
aln | isap:468348326 | 0.418596 |
device include the buffer | isap:119545584 | 0.403623 |
substrate | isap:14004361 | 0.396450 |
ceo2 | isap:91619881 | 0.387553 |
silicon | isap:33838108 | 0.291492 |
yttrium | isap:35539559 | 0.218796 |
cd | isap:463868232 | 0.189631 |