Premodifier: bufferHead noun: layer
| Same concepts |
|---|
Broader concepts
| label | provenance | confidence |
|---|---|---|
| el layer | isap:370508419 | 0.759167 |
| first buffer layer | isap:370508650 | 0.724404 |
| single layer | isap:370508029 | 0.722971 |
| additional layer | isap:370507978 | 0.687000 |
| further layer | isap:370509681 | 0.677516 |
| buffer layer | isap:370508310 | 0.671417 |
| layer | isap:370507199 | 0.655823 |
| electrode | isap:340264404 | 0.563069 |
| solar cell | isap:199256346 | 0.411238 |
| method | isap:158044581 | 0.385885 |
| thin film | isap:199833599 | 0.243661 |
Narrower concepts
| label | provenance | confidence |
|---|---|---|
| semiconductor layer | isap:370507581 | 0.698253 |
| buffer layer | isap:370508310 | 0.671417 |
| aluminum nitride | isap:36263141 | 0.658235 |
| diffusion barrier | isap:39409414 | 0.630090 |
| active region | isap:123813769 | 0.523172 |
| algan | isap:371716219 | 0.448436 |
| layer | isap:370507346 | 0.443712 |
| sapphire | isap:362833205 | 0.420937 |
| aln | isap:468348326 | 0.418596 |
| device include the buffer | isap:119545584 | 0.403623 |
| substrate | isap:14004361 | 0.396450 |
| ceo2 | isap:91619881 | 0.387553 |
| silicon | isap:33838108 | 0.291492 |
| yttrium | isap:35539559 | 0.218796 |
| cd | isap:463868232 | 0.189631 |