Premodifier: chemical vapor deposition
Head noun: cvd

Same concepts

Broader concepts

labelprovenanceconfidence
known methodisap:2109838780.878163
known deposition processisap:2359512430.877350
conventional methodisap:2109838730.869981
deposition methodisap:2109838750.869849
conventional deposition processisap:2359512390.869669
processisap:2359512340.859638
techniqueisap:2641488120.859326
suitable deposition techniqueisap:2641488260.855729
deposition processisap:2359512360.852275
suitable techniqueisap:2641488160.845975
depositionisap:2375406650.835603
know techniqueisap:2641488230.821072
standard deposition techniqueisap:2641488250.814701
many different techniqueisap:2641488650.804841
suitable processisap:2359512410.801747
other deposition techniqueisap:2641488330.798532
methodisap:2109838690.792133
vapor deposition techniqueisap:2641488360.789721
other coating techniqueisap:2641488400.788072
more deposition techniqueisap:2641488740.785369
various deposition techniqueisap:2641488350.778221
conventional deposition techniqueisap:2641488200.777743
suitable deposition processisap:2359512580.776179
convenient deposition methodisap:2109839220.770910
conventional meansisap:4655647160.765755
know deposition techniqueisap:2641488470.755504
known techniqueisap:2641488290.753224
semiconductor fabrication processisap:2359512620.752725
various techniqueisap:2641488190.748511
vapor depositionisap:2375406670.744309
known processisap:2359512440.740426
other techniqueisap:2641488390.739394
deposition techniqueisap:2641488130.737759
convenient methodisap:2109839250.737198
other methodisap:2109838870.731794
appropriate techniqueisap:2641488600.729784
suitable meansisap:4655647200.717266
several methodisap:2109839160.702002
vapor phase processisap:2359512640.701149
number of conventional processisap:2140310530.695599
known deposition methodisap:2109838770.679646
various methodisap:2109838800.657903
variety of processisap:2368596670.654048
suitable mannerisap:2097383220.653142
variety of techniqueisap:2368596680.649656
variety of methodisap:2368596720.642852
number of methodisap:2140310470.639471
chemical processisap:2359512910.639313
systemisap:2146815060.637472
suitable methodisap:2109838840.635296
metallization techniqueisap:2641488310.627541
variety of different techniqueisap:2368596750.622997
manufacturing processisap:2359512500.622498
number of techniqueisap:2140310500.620676
use methodisap:2109839020.609982
known mannerisap:2097383260.603888
molecular beam epitaxy mbeisap:2803583020.603583
substrate by techniqueisap:2638722020.567739
conventional techniqueisap:2641488210.556322
combination of methodisap:1117940630.549311
layer of silicon nitrideisap:4695063260.537965
metalisap:4667875170.518902
vacuum depositionisap:2375406720.514150
alternativelyisap:2782757590.510543
artisap:2803460620.497209
meansisap:4655647180.462927
plasmaisap:2106418570.460602
cntsisap:2483314900.460278
apparatusisap:2635837050.450289
substrateisap:2638722000.411690
sputteringisap:2381291640.386012
useisap:2803784630.364225
angstromisap:3294289940.317850
applicationisap:1114253860.309858
cntisap:2803403940.306421
exampleisap:2321014140.273433